The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Sep. 08, 2016
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Yoshiaki Kageshima, Chichibu, JP;
Daisuke Muto, Chichibu, JP;
Kenji Momose, Chichibu, JP;
Yoshihiko Miyasaka, Sanmu, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/68 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); C30B 25/02 (2006.01); C30B 25/12 (2006.01); C30B 25/16 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01); C23C 16/44 (2006.01); C23C 16/32 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/681 (2013.01); C23C 16/325 (2013.01); C23C 16/4401 (2013.01); C23C 16/52 (2013.01); C30B 25/02 (2013.01); C30B 25/12 (2013.01); C30B 25/16 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01);
Abstract
A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.