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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11293115 B1

PDFFull Text
Date of Patent:
Apr. 05, 2022

Filed:

Aug. 21, 2017

Method for producing a sic epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less

Applicant:

Showa Denko K.k., Tokyo, JP;

Inventors:

Ling Guo, Chichibu, JP;

Koji Kamei, Chichibu, JP;

Assignee:

SHOWA DENKO K.K., Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Kenneth A Bratland, Jr

Int. Cl.
CPC ...
C30B 25/18 (2006.01); C30B 29/36 (2006.01); C30B 25/20 (2006.01); C23C 16/32 (2006.01); G01N 21/95 (2006.01); G06T 7/00 (2017.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C23C 16/325 (2013.01); C30B 25/20 (2013.01); G01N 21/9505 (2013.01); G06T 7/0004 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 22/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); G06T 2207/10056 (2013.01); G06T 2207/30148 (2013.01);
Abstract

A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cmor less.

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Quick Actions:

Guo, Ling. (2022). Method for producing a sic epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less (U.S. Patent No. 11293115). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11293115

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