The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
May. 14, 2018
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Koji Kamei, Chichibu, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/32 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01); C01B 32/956 (2017.01); C01B 32/90 (2017.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C01B 32/956 (2017.08); C23C 16/325 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02428 (2013.01); H01L 21/02634 (2013.01); H01L 29/04 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); C01B 32/90 (2017.08);
Abstract
According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 μm or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.