The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Aug. 21, 2017
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Ling Guo, Chichibu, JP;
Koji Kamei, Chichibu, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); G01N 21/95 (2006.01); C23C 16/32 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9501 (2013.01); C23C 16/325 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01);
Abstract
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cmor less.