The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Sep. 20, 2006
Applicants:
Gaku Oriji, Ichihara, JP;
Koji Kamei, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Akihiro Matsuse, Ichihara, JP;
Inventors:
Gaku Oriji, Ichihara, JP;
Koji Kamei, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Akihiro Matsuse, Ichihara, JP;
Assignee:
Toyoda Gosei Co., Ltd., Aichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/78 (2006.01); H01L 33/20 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/38 (2013.01);
Abstract
The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.