Tokyo, Japan

Kazuki Ota

This inventor holds 28 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Semiconductor Technology. Top assignees: Renesas Electronics Corporation, Nec Corporation, Ricoh Company, Ltd.. Active years: 2003-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuki Ota. Retrieved from https://idiyas.com/inventor/kazuki-ota

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 28 

% Patents Active = 67.9


Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 185(Granted Patents)


Location History:

  • Minato-ku, JP (2015)
  • Kanagawa, JP (2014 - 2017)
  • Kawasaki, JP (2017)
  • Tokyo, JP (2003 - 2018)

Company Filing History:


Years Active: 2003-2024

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Areas of Expertise:
Field Effect Transistor
Semiconductor Device
Multilayered Epitaxial Film
Heterojunction Transistor
Bipolar Transistor
Schottky Barrier Diode
Group III Nitride
Manufacturing Method
Electronic Device
Reverse Blocking Characteristics
Gate Leakage Current
28 patents (USPTO):Explore Patents

Title: Kazuki Ota - Innovator in Field Effect Transistor Technology

Introduction

Kazuki Ota is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 27 patents, he has made substantial advancements in the design and functionality of field effect transistors.

Latest Patents

Among his latest inventions are patents related to field effect transistors and multilayered epitaxial films necessary for their fabrication. His innovative approach reduces leak current components by effectively conducting residual carriers within a buffer layer, improving breakdown voltage and enhancing carrier confinement effects. Specifically, Ota's work in GaN-type field effect transistors explores the use of composition-modulated AlGaN layers, which gradually decrease in aluminum composition towards the top to serve as an effective hetero buffer. This invention plays a crucial role in optimizing pinch-off characteristics and suppressing short channel effects.

Another notable patent involves a semiconductor device featuring a field-effect transistor that amplifies high-frequency signals via a dedicated gate electrode connected to a semiconductor layer. This design is complemented by a field plate electrode and a voltage dividing circuit, ensuring equal potential across respective parts of the field plate, thus enhancing performance.

Career Highlights

Kazuki Ota has honed his skills and expertise while working with leading companies in the semiconductor industry, including Renesas Electronics Corporation and NEC Corporation. During his tenure at these organizations, he has developed technology that has shaped modern electronic devices.

Collaborations

Throughout his career, Ota has collaborated with esteemed colleagues, including Yuji Ando and Yasuhiro Okamoto. These partnerships have not only contributed to his inventions but have also fostered a fruitful exchange of ideas that has spurred innovation in the field of semiconductor technology.

Conclusion

Kazuki Ota's dedication to improving field effect transistor technology has underscored his role as a key innovator in the semiconductor industry. With each patent, he continues to pave the way for advancements that enhance electronic device performance and efficiency. His innovative spirit and collaborative efforts exemplify the transformative power of creativity in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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