The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2014
Filed:
Nov. 26, 2009
Yasuhiro Okamoto, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Kazuomi Endo, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Kazuomi Endo, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A semiconductor device includes semiconductor layers, an anode electrode, and a cathode electrode. The semiconductor layers include a composition change layer, the anode electrode is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode and a part of the semiconductor layers, the cathode electrode is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode and another part of the semiconductor layers, the anode electrode and the cathode electrode are capable of applying a voltage to the composition change layer in a direction perpendicular to the principal surface.