The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2014
Filed:
Nov. 17, 2008
Kazuki Ota, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A field effect transistor includes: a channel layercontaining GaN or InGaN; a first electron-supplying layerdisposed over the channel layerand containing InAlGaN (0≦x<1, 0<y<1, 0<x+y<1); a first etch stop layerdisposed over the first electron-supplying layerand containing indium aluminum nitride (InAlN); and a second electron-supplying layerprovided over the first etch stop layerand containing InAlGaN (0≦a<1, 0<b<1, 0<a+b<1). A first recess, which extends through the second electron-supplying layerand the first etch stop layerand having a bottom surface constituted of a section of the first electron-supplying layer, is provided in the second electron-supplying layerand the first etch stop layer. A gate electrodecovers the bottom surface of the first recessand is disposed in the first recess. The second electron-supplying layer is provided so as to overlap with regions of an interface between the first electron-supplying layerand the channel layerexcept a region thereof under the bottom surface of the first recesscovering the gate electrode