The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Dec. 25, 2009
Takashi Inoue, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Abstract
A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron transit layerformed of a III-nitride semiconductor is formed on a substrate, an electron supply layerformed of a III-nitride semiconductor forms a heterojunction with an upper surface of the electron transit layer, a gate electrode, a source electrodeA, and a drain electrodeB are arranged on the electron supply layer, n-type conductive layer regionsA andB each extended from an upper part of the electron transit layerto an upper surface of the electron supply layerare provided in at least a part below the source electrodeA and a part below the drain electrodeB, and an n-type impurity concentration at a heterojunction interface of an electron transit layerpart of each of the n-type conductive layer regionsA andB with the electron supply layeris 1×10cmor more.