The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Nov. 20, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Yasuhiro Okamoto, Kanagawa, JP;
Yuji Ando, Kanagawa, JP;
Tatsuo Nakayama, Kanagawa, JP;
Takashi Inoue, Kanagawa, JP;
Kazuki Ota, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of InAlN (0≦z≦1). The channel layer includes a composition of AlGaN (0≦x≦1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.