The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Oct. 16, 2009
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Yuji Ando, Tokyo, JP;
Hironobu Miyamoto, Tokyo, JP;
Tatsuo Nakayama, Tokyo, JP;
Yasuhiro Okamoto, Tokyo, JP;
Takashi Inoue, Tokyo, JP;
Kazuki Ota, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InAlGaN (0•xc•1, 0•yc•1, 0<xc+yc•1). The a-axis length on the side of a surface in the third nitride semiconductor is shorter than the a-axis length on the side of the substrate.