The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2017
Filed:
Aug. 21, 2012
Kazuki Ota, Kawasaki, JP;
Kazuki Ota, Kawasaki, JP;
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Abstract
A semiconductor device is provided with: a field-effect transistor that has a source electrode and a drain electrode that are connected to a semiconductor layer, a gate electrode that is provided on the surface of the semiconductor layer between the source electrode and the drain electrode, and a field plate electrode that is provided on the surface of the semiconductor layer in the vicinity of the gate electrode via an insulating layer, wherein the field-effect transistor amplifies high frequency signals received by the gate electrode to be outputted from the drain electrode; and a voltage dividing circuit that divides a potential difference between the drain electrode and a reference potential GND, and applies a bias voltage such that respective parts of the field plate electrode have a mutually equal potential.