The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
May. 15, 2012
Yasuhiro Okamoto, Kanagawa, JP;
Yuji Ando, Kanagawa, JP;
Tatsuo Nakayama, Kanagawa, JP;
Takashi Inoue, Kanagawa, JP;
Kazuki Ota, Kanagawa, JP;
Yasuhiro Okamoto, Kanagawa, JP;
Yuji Ando, Kanagawa, JP;
Tatsuo Nakayama, Kanagawa, JP;
Takashi Inoue, Kanagawa, JP;
Kazuki Ota, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition InAlN (0≦z≦1), a channel layer having a composition of: AlGaN (0≦x≦1) or InGaN (0≦y≦1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.