Kawasaki, Japan

Katsuyoshi Matsuura

This inventor holds 22 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Ferroelectric Semiconductor Devices. Top assignees: Fujitsu Corporation, Fujitsu Microelectronics Limited, Fujitsu Semiconductor Limited. Active years: 1997-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsuyoshi Matsuura. Retrieved from https://idiyas.com/inventor/katsuyoshi-matsuura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 68.2


Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 150(Granted Patents)


Location History:

  • Kawaskai, JP (2004)
  • Kanagawa, JP (2004)
  • Shinjuku, JP (2011)
  • Kawasaki, JP (1997 - 2015)
  • Yokohama, JP (2014 - 2019)
  • Kuwana, JP (2018 - 2020)

Company Filing History:


Years Active: 1997-2020

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Areas of Expertise:
Ferroelectric Memory
Integrated Circuit
Semiconductor Device
Manufacturing Method
Ferroelectric Capacitor
Full-Wave Rectifier
Film Reduction
Memory Device
Protective Layer
Fabrication Process
Oxide Reduction
22 patents (USPTO):Explore Patents

Title: Innovations of Katsuyoshi Matsuura in Semiconductor Technology

Introduction: Katsuyoshi Matsuura is a notable inventor based in Kawasaki, Japan, recognized for his significant contributions to semiconductor technology. With a remarkable portfolio of 22 patents, Matsuura has developed innovative devices and circuit designs that enhance the performance and efficiency of semiconductor systems.

Latest Patents: Matsuura's latest patents showcase his expertise in semiconductor devices. One such patent describes a semiconductor device featuring a unique configuration of first structures. Each structure incorporates a first N-type region, a P-type region surrounded by the first N-type region, and a second N-type region encircling the P-type region. These first structures are wired together, enabling them to connect in parallel, forming a robust diode.

Another noteworthy patent details a semiconductor integrated circuit apparatus along with its manufacturing method. This innovation aims to mitigate leakage current induced by ballast resistors while reducing inconsistency in this current as well. To achieve this, Matsuura's design specifies that the peak impurity concentration of the ballast resistors is lower than that in the extension regions, with a deeper placement of the ballast resistors compared to the extension regions.

Career Highlights: Matsuura has had a remarkable career, significantly impacting the semiconductor field. He has worked with prominent companies such as Fujitsu Corporation and Fujitsu Microelectronics Limited, where he applied his inventive skills to drive advancements in technology.

Collaborations: Throughout his career, Matsuura has collaborated with esteemed professionals in the field, including his coworkers Yoshimasa Horii and Ko Nakamura. These partnerships have likely contributed to the innovations that have emerged from his work.

Conclusion: Katsuyoshi Matsuura stands out as a leading inventor in the realm of semiconductor technology. His extensive patent portfolio and collaborations underscore his commitment to innovation, paving the way for advancements in electronics and circuit design. Matsuura's contributions continue to shape the semiconductor industry, ensuring greater efficiency and performance in devices worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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