The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Feb. 22, 2018
Applicant:
United Semiconductor Japan Co., Ltd., Kuwana-Shi, Mie, JP;
Inventor:
Katsuyoshi Matsuura, Kuwana, JP;
Assignee:
UNITED SEMICONDUCTOR JAPAN CO., LTD., Kuwana-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H02M 7/06 (2006.01); H01L 27/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0692 (2013.01); H01L 27/0814 (2013.01); H01L 29/0607 (2013.01); H01L 29/0649 (2013.01); H01L 29/66136 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H02M 7/06 (2013.01);
Abstract
One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first N-type region; a P-type region which is surrounded by the first N-type region; and a second N-type region which is surrounded by the P-type region. The first N-type region and the P-type region are wired, and the plurality of first structures are connected in parallel to form one diode.