Fujitsu Corporation

Fujitsu Microelectronics Limited

Fujitsu Semiconductor Limited

Mie Fujitsu Semiconductor Limited

United Semiconductor Japan Co., Ltd.

Katsuyoshi Matsuura

Yoshimasa Horii

Shan Sun

Naoya Sashida

Hideyuki Noshiro

Ko Nakamura

Fan Chu

Takeyasu Saito

George Hickert

Soichiro Ozawa

Wensheng Wang

Kazuaki Takai

Junichi Ariyoshi

Tomohiro Takamatsu

Mitsushi Fujiki

Hiroyuki Ogawa

Osamu Matsuura

Fumitake Mieno

Glen Richard Fox

Satoru Mihara

Masaki Kurasawa

Genichi Komuro

Aki Dote

Masayoshi Asano

Jeffrey Scott Cross

Brian Lee Eastep

Masaaki Nakabayashi

Hirokazu Yamanishi

Atsuhiro Tsukune

Naoyuki Satoh

Kiyokatsu Suzuki

Mari Tani

Myounggoo Lee

One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first N-type region; a P-type region which is surrounded by the first N-type region; and a second N-type region which is surrounded by the P-type region. The first N-type region and the P-type region are wired, and the plurality of first structures are connected in parallel to form one diode.

Semiconductor device and full-wave rectifier circuit

A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resistors is made smaller than the peak impurity concentration in the extension regions, and the depth of the ballast resistors is made greater than the depth of the extension regions.

Semiconductor integrated circuit apparatus and manufacturing method for same

A ferroelectric capacitor is formed on a semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a ferroelectric film and an upper electrode stacked in an order recited. A first capacitor protective film of aluminum oxide having a thickness equal to or thicker than 30 nm is formed covering the ferroelectric capacitor. A first insulating film of silicon oxide is formed on the first capacitor protective film by chemical vapor deposition using high density plasma.

Manufacture method for semiconductor device capable of preventing reduction of ferroelectric film

A method for manufacturing a semiconductor device includes preparing a semiconductor substrate having a first region of a first electrical conduction type as a part of a surface layer of the semiconductor substrate and a first gate electrode and a capacitor structure, the first gate electrode and the capacitor structure being disposed on the first region; forming a first insulating film covering the first gate electrode and the capacitor structure, the first insulating film being covering the surface of the semiconductor substrate; implanting a first impurity of a second electrical conduction type into the semiconductor substrate, so as to form a region of the second electrical conduction type in each of a second region and a third region, the second region being a region between the first gate electrode and the capacitor structure, the third region being a region opposite to the capacitor structure with the first gate electrode therebetween.

Method for manufacturing semiconductor device

A ferroelectric memory device manufacturing method includes the steps of forming an interlayer isolating film for covering a transistor formed on a semiconductor substrate; forming a conductive plug in the interlayer insulating film to contact a diffusion region of the transistor formed on the semiconductor substrate; forming a ferroelectric capacitor including a lower electrode, a ferroelectric film and an upper electrode; and forming a compound film including silicon (Si) and a CH group on a surface of the interlayer insulating film and a surface of the conductive plug by depositing a Si compound containing Si atoms and the CH groups; wherein the compound film is formed after forming the conductive plug, and the compound film is formed before forming the lower electrode; and a self-orientation film is formed on a surface of the compound film.

Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing method

A ferroelectric capacitor formation method necessary for stably fabricating an FeRAM and a semiconductor device fabrication method. After a PZT film is deposited on a lower electrode layer, the PZT film is crystallized by performing heat treatment in an atmosphere of a mixed gas which contains Ogas and Ar gas. In this case, the flow rate of the Ogas is controlled by one mass flow controller. The flow rate of the Ar gas used for purging and the flow rate of the Ar gas used for adjusting Ogas concentration are controlled by different mass flow controllers. Before raising the temperature, the Ogas, the Ar gas used for purging, and the Ar gas used for adjusting Ogas concentration are made to flow at predetermined flow rates. Only the Ar gas used for purging is stopped, raising the temperature is begun, and the heat treatment is performed. At this time the Ogas and the Ar gas used for adjusting Ogas concentration flow at the predetermined flow rates. As a result, an atmosphere in which the heat treatment is performed for crystallizing the PZT film can be stabilized. Accordingly, a ferroelectric capacitor having predetermined performance is stably formed and an FeRAM is stably fabricated.

Method for forming ferroelectric capacitor and method for fabricating semiconductor device

In pattern-forming ferroelectric capacitor structures by a one mask etching, after an Ir film to be a lower electrode film is formed, an AlOfilm to be an oxide reduction film reducing an Ir oxide which is formed on a surface layer of the lower electric film is deposited on the lower electrode film, and then this oxide reduction film is removed by, for example, a dilute hydrofluoric acid treatment.

Method of manufacturing a ferroelectric semiconductor device utilizing an oxide reduction film

The present invention provides a method of manufacturing a semiconductor device. The method includes the steps of forming a first interlayer insulating film over a silicon substrate; forming a first conductive film on the first interlayer insulating film; forming a first ferroelectric film, which is crystallized, on the first conductive film; annealing the first ferroelectric film; after the annealing, forming, on the first ferroelectric film, a second ferroelectric film made of an amorphous material or a microcrystalline material; forming a second conductive film on the second ferroelectric film; and forming a capacitor by patterning the first and second conductive films and the first and second ferroelectric films.

Method of manufacturing semiconductor device

The method for fabricating the semiconductor device comprises: the step of forming a ferroelectric capacitor over a semiconductor substrate; the step of forming an insulating film, covering the ferroelectric capacitor; the step of processing thermal treatment to eliminate hydrogen and/or water adsorbed on a surface of the insulating filmor occluded in the insulating film; and the step of forming a capacitor protective filmof an aluminum oxide film over the insulating film. The step of processing the thermal treatment and the step of forming the capacitor protective film are performed continuously in the same system without exposing to an ambient atmosphere.

Method for fabricating semiconductor device

A semiconductor device fabrication method includes the steps of forming a conductive plug in an insulating layer on a semiconductor substrate so as to be connected to an element on the substrate; forming a titanium aluminum nitride (TiAlN) oxygen barrier film over the conductive plug; forming a titanium (Ti) film over the oxygen barrier film; applying a thermal process to the titanium film in nitrogen atmosphere to allow the titanium film to turn into a titanium nitride (TiN) film; and forming a lower electrode film of a capacitor over the titanium nitride film.

Semiconductor device with ferroelectric capacitor and fabrication method thereof

There are provided a step of forming an insulating film over a semiconductor substrate, a step of exciting a plasma of a gas having a molecular structure in which hydrogen and nitrogen are bonded and then irradiating the plasma onto the insulating film, a step of forming a self-orientation layer made of substance having a self-orientation characteristic on the insulating film, and a step of forming a first conductive film made of conductive substance having the self-orientation characteristic on the self-orientation layer.

Manufacturing method of semiconductor device

An IrOfilm is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOfilm. Thereafter, furnace annealing at 600&#xb0; C. or higher, for example, 650&#xb0; C. is performed for 60 minutes in, for example, an Oatmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrOfilm is formed as a second conductive oxide film on the IrOfilm by a sputtering method.

Manufacturing method of semiconducter device

A first interlayer insulation film is formed, on which a SiOcap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiOcap film is preformed by heat treatment. Then, an AlOfilm is formed on the SiOcap film. Subsequently, heat treatment is performed on the AlOin an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the AlOfilm, a platinum film, a PLZT film, and an IrOfilm are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.

Semiconductor device and method for manufacturing the same

A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.

Growing community of inventors

Kawasaki, Japan

Katsuyoshi Matsuura