The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Jan. 17, 2014
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventor:
Katsuyoshi Matsuura, Kawasaki, JP;
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 27/11507 (2013.01); H01L 28/57 (2013.01);
Abstract
A ferroelectric capacitor is formed on a semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a ferroelectric film and an upper electrode stacked in an order recited. A first capacitor protective film of aluminum oxide having a thickness equal to or thicker than 30 nm is formed covering the ferroelectric capacitor. A first insulating film of silicon oxide is formed on the first capacitor protective film by chemical vapor deposition using high density plasma.