The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2009
Filed:
Jun. 27, 2005
Katsuyoshi Matsuura, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Katsuyoshi Matsuura, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
The method for fabricating the semiconductor device comprises: the step of forming a ferroelectric capacitor over a semiconductor substrate; the step of forming an insulating film, covering the ferroelectric capacitor; the step of processing thermal treatment to eliminate hydrogen and/or water adsorbed on a surface of the insulating filmor occluded in the insulating film; and the step of forming a capacitor protective filmof an aluminum oxide film over the insulating film. The step of processing the thermal treatment and the step of forming the capacitor protective film are performed continuously in the same system without exposing to an ambient atmosphere.