The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
May. 24, 2010
Katsuyoshi Matsuura, Yokohama, JP;
Masayoshi Asano, Yokohama, JP;
Hiroyuki Ogawa, Yokohama, JP;
Myounggoo Lee, Yokohama, JP;
Katsuyoshi Matsuura, Yokohama, JP;
Masayoshi Asano, Yokohama, JP;
Hiroyuki Ogawa, Yokohama, JP;
Myounggoo Lee, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A method for manufacturing a semiconductor device includes preparing a semiconductor substrate having a first region of a first electrical conduction type as a part of a surface layer of the semiconductor substrate and a first gate electrode and a capacitor structure, the first gate electrode and the capacitor structure being disposed on the first region; forming a first insulating film covering the first gate electrode and the capacitor structure, the first insulating film being covering the surface of the semiconductor substrate; implanting a first impurity of a second electrical conduction type into the semiconductor substrate, so as to form a region of the second electrical conduction type in each of a second region and a third region, the second region being a region between the first gate electrode and the capacitor structure, the third region being a region opposite to the capacitor structure with the first gate electrode therebetween.