Kawasaki, Japan

Masayoshi Asano


Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 52(Granted Patents)


Location History:

  • Kasugai, JP (1998 - 2001)
  • Kawasaki, JP (2010 - 2013)
  • Yokohama, JP (2013 - 2014)

Company Filing History:


Years Active: 1998-2014

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13 patents (USPTO):

Title: Masayoshi Asano: Innovator in Semiconductor Technology

Introduction

Masayoshi Asano is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work has been instrumental in advancing the manufacturing processes and designs of semiconductor devices.

Latest Patents

Asano's latest patents include a method for manufacturing semiconductor devices. This method involves preparing a semiconductor substrate with specific regions for electrical conduction and includes the formation of gate electrodes and capacitor structures. Another notable patent describes a semiconductor device that features a p-type semiconductor substrate, an n-type drift region, and a p-type body region, showcasing innovative designs for efficient electronic components.

Career Highlights

Throughout his career, Masayoshi Asano has worked with leading companies in the semiconductor industry, including Fujitsu Semiconductor Limited and Fujitsu Microelectronics Limited. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Asano has collaborated with notable professionals in the field, including Toshio Nomura and Taiji Ema. These collaborations have contributed to the advancement of semiconductor innovations and have fostered a spirit of teamwork in research and development.

Conclusion

Masayoshi Asano's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced electronic devices.

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