The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Oct. 30, 2006
Taiji Ema, Kawasaki, JP;
Masayoshi Asano, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Junichi Ariyoshi, Kawasaki, JP;
Taiji Ema, Kawasaki, JP;
Masayoshi Asano, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Junichi Ariyoshi, Kawasaki, JP;
Fujitsu Microelectronics Limited, Yokohama, JP;
Abstract
According to the present invention, provided is a semiconductor device including: a p-type silicon substrate; a shallow n-well formed in the silicon substrate; a shallow p-well formed beside the shallow n-well in the silicon substrate; and a deep n-well which is formed beside the shallow p-well in the silicon substrate, and which is deeper than the shallow p-well. In addition, a deep p-well, which is deeper than the shallow p-well, is formed between the shallow p-well and the deep n-well in the silicon substrate.