The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Sep. 07, 2011
Applicants:
Masaya Katayama, Yokohama, JP;
Masayoshi Asano, Yokohama, JP;
Inventors:
Masaya Katayama, Yokohama, JP;
Masayoshi Asano, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a p-type semiconductor substrate, an n-type drift region formed in the p-type semiconductor substrate, and a p-type body region formed in the n-type drift region. A circular gate electrode is formed over a pn junction between sides of the p-type body region and the n-type drift region along the pn junction. An n-type drain region and an n-type source region are formed in the n-type drift region and the p-type body region, respectively, with a part of the gate electrode between.