The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Nov. 20, 1996
Taiji Ema, Kawasaki, JP;
Satoru Miyoshi, Kawasaki, JP;
Tatsumi Tsutsui, Kasugai, JP;
Masaya Katayama, Kasugai, JP;
Masayoshi Asano, Kasugai, JP;
Kenichi Kanazawa, Kawasaki, JP;
Fujitsu Limited, Kanagawa, JP;
Fujitsu VLSI Limited, Aichi, JP;
Abstract
Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.