The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Nov. 21, 2011
Masayoshi Asano, Yokohama, JP;
Junichi Mitani, Yokohama, JP;
Masayoshi Asano, Yokohama, JP;
Junichi Mitani, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A gate electrode, an element isolation film and a drain region in an LDMOS transistor formation region and a gate electrode, an element isolation film and an anode region in an ESD protection element formation region are formed to satisfy relationships of A≧Aand B<Bwhere the LDMOS transistor formation region has an overlap length Aof the gate electrode and the element isolation film and a distance Bbetween the gate electrode and the drain region, and the ESD protection element formation region has an overlap length Aof the gate electrode and the element isolation film and a distance Bbetween the gate electrode and the anode region.