The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Apr. 17, 2000
Katsuyoshi Matsuura, Kawasaki, JP;
Mari Tani, Kawasaki, JP;
Yoshimasa Horii, Kawasaki, JP;
Fan Chu, Colorado Springs, CO (US);
Glen R. Fox, Colorado Springs, CO (US);
Brian Eastep, Colorado Springs, CO (US);
Katsuyoshi Matsuura, Kawasaki, JP;
Mari Tani, Kawasaki, JP;
Yoshimasa Horii, Kawasaki, JP;
Fan Chu, Colorado Springs, CO (US);
Glen R. Fox, Colorado Springs, CO (US);
Brian Eastep, Colorado Springs, CO (US);
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.