The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Jan. 12, 2015
Applicant:
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Inventors:
Katsuyoshi Matsuura, Kuwana, JP;
Junichi Ariyoshi, Mie, JP;
Assignee:
MIE FUJITSU SEMICONDUCTOR LIMITED, Kuwana-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/07 (2006.01); H01L 27/06 (2006.01); H01L 27/11517 (2017.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0288 (2013.01); H01L 21/26586 (2013.01); H01L 21/823418 (2013.01); H01L 21/823814 (2013.01); H01L 27/0629 (2013.01); H01L 27/0738 (2013.01); H01L 27/11517 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor integrated circuit apparatus and a manufacturing method for the same are provided in such a manner that a leak current caused by a ballast resistor is reduced, and at the same time, the inconsistency in the leak current is reduced. The peak impurity concentration of the ballast resistors is made smaller than the peak impurity concentration in the extension regions, and the depth of the ballast resistors is made greater than the depth of the extension regions.