The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2006

Filed:

Jun. 02, 2004
Applicants:

Katsuyoshi Matsuura, Kawasaki, JP;

Hideyuki Noshiro, Kawasaki, JP;

Aki Dote, Kawasaki, JP;

Inventors:

Katsuyoshi Matsuura, Kawasaki, JP;

Hideyuki Noshiro, Kawasaki, JP;

Aki Dote, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first interlayer insulation film is formed, on which a SiOcap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiOcap film is preformed by heat treatment. Then, an AlOfilm is formed on the SiOcap film. Subsequently, heat treatment is performed on the AlOin an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the AlOfilm, a platinum film, a PLZT film, and an IrOfilm are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.


Find Patent Forward Citations

Matsuura, Katsuyoshi. (2006). Semiconductor device and method for manufacturing the same (U.S. Patent No. 7038264). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7038264

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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