Company Filing History:

28 out of 25,530

Sharp Kabushiki Kaisha Corporation

2 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 1986-2005

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30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6888867 - Semiconductor laser device and fabrication method thereof (2005-05-03),

2. 6635901 - Semiconductor device including an InGaAIN layer (2003-10-21),

3. 5804839 - III-V nitride compound semiconductor device and method for fabricating (1998-09-08),

4. 5693180 - Dry etching method for a gallium nitride type compound semiconductor (1997-12-02),

5. 5433167 - Method of producing silicon-carbide single crystals by sublimation (1995-07-18),

6. 5387804 - Light emitting diode (1995-02-07),

7. 5329141 - Light emitting diode (1994-07-12),

8. 5319220 - Silicon carbide semiconductor device (1994-06-07),

9. 5288365 - Method for growing a silicon carbide single crystal (1994-02-22),

10. 5279701 - Method for the growth of silicon carbide single crystals (1994-01-18),

11. 5272107 - Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS) (1993-12-21),

12. 5243204 - Silicon carbide light emitting diode and a method for the same (1993-09-07),

13. 5230768 - Method for the production of SiC single crystals by using a specific (1993-07-27),

14. 5229625 - Schottky barrier gate type field effect transistor (1993-07-20),

15. 5216264 - Silicon carbide MOS type field-effect transistor with at least one of (1993-06-01),

Katsuki Furukawa: Innovator in Semiconductor Technology

Introduction

Katsuki Furukawa, a distinguished inventor based in Sakai, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 30 patents, he has been instrumental in advancing innovations that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a groundbreaking semiconductor laser device and fabrication method that features a substrate and an n-GaN layer made from a nitride semiconductor. The unique design includes a trench with a slope inclined at 62 degrees from the substrate's main plane, enabling optimized layer formation. In another noteworthy invention, he developed a semiconductor device that incorporates an InGaAIN layer on a silicon substrate, with a compound semiconductor layer characterized by a specific composition of In, Ga, and Al. This design also utilizes a trench inclined at 62 degrees, illustrating his innovative approach to enhancing semiconductor functionality.

Career Highlights

Throughout his career, Katsuki has collaborated with prominent companies, including Sharp Kabushiki Kaisha Corporation, where his work was integral in bringing advanced semiconductor technologies to market. His innovative spirit and technical expertise have earned him recognition as a key figure in his field.

Collaborations

Furukawa’s collaborative efforts extend to talented individuals such as Akira Suzuki and Yoshihisa Fujii. Working alongside these esteemed colleagues, he has further pushed the boundaries of semiconductor technology and innovation.

Conclusion

Katsuki Furukawa's dedication to innovation in semiconductor technology is evident in his extensive patent portfolio and collaborative projects. As he continues to push the frontiers of technology, his contributions will undoubtedly shape the future of the semiconductor industry.

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.