Sakai, Japan

Katsuki Furukawa

This inventor holds 30 USPTO granted patents, primarily in Silicon Carbide Semiconductors. Top assignees: Sharp Kabushiki Kaisha Corporation, Sharp Corporation, Other. Active years: 1986-2005.


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 19

Forward Citations = 850(Granted Patents)


Location History:

  • Tenri, JP (1986)
  • Osaka, JP (1988 - 1998)
  • Sakai, JP (1989 - 2005)

Company Filing History:


Years Active: 1986-2005

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Areas of Expertise:
Silicon Carbide
Light Emitting Diode
Field Effect Transistor
Single Crystal Growth
Gallium Nitride
Heteroepitaxial Growth
MOS Technology
Dry Etching
Sublimation
Electrode Structure
Compound Semiconductor
Fabrication Method
30 patents (USPTO):Explore Patents

Katsuki Furukawa: Innovator in Semiconductor Technology

Introduction

Katsuki Furukawa, a distinguished inventor based in Sakai, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 30 patents, he has been instrumental in advancing innovations that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a groundbreaking semiconductor laser device and fabrication method that features a substrate and an n-GaN layer made from a nitride semiconductor. The unique design includes a trench with a slope inclined at 62 degrees from the substrate's main plane, enabling optimized layer formation. In another noteworthy invention, he developed a semiconductor device that incorporates an InGaAIN layer on a silicon substrate, with a compound semiconductor layer characterized by a specific composition of In, Ga, and Al. This design also utilizes a trench inclined at 62 degrees, illustrating his innovative approach to enhancing semiconductor functionality.

Career Highlights

Throughout his career, Katsuki has collaborated with prominent companies, including Sharp Kabushiki Kaisha Corporation, where his work was integral in bringing advanced semiconductor technologies to market. His innovative spirit and technical expertise have earned him recognition as a key figure in his field.

Collaborations

Furukawa’s collaborative efforts extend to talented individuals such as Akira Suzuki and Yoshihisa Fujii. Working alongside these esteemed colleagues, he has further pushed the boundaries of semiconductor technology and innovation.

Conclusion

Katsuki Furukawa's dedication to innovation in semiconductor technology is evident in his extensive patent portfolio and collaborative projects. As he continues to push the frontiers of technology, his contributions will undoubtedly shape the future of the semiconductor industry.

Profile summary based on public USPTO records.
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