The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1998
Filed:
Dec. 23, 1996
Applicant:
Inventors:
Daisuke Hanaoka, Nara-ken, JP;
Katsuki Furukawa, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257123 ; 257 94 ;
Abstract
A Ill-V nitride compound semiconductor device of the present invention includes: at least one III-V nitride compound semiconductor layer; and an electrode layer made of non-single crystalline GaN in contact with the III-V nitride compound semiconductor layer.
Hanaoka, Daisuke. (1998). Iii-v nitride compound semiconductor device and method for fabricating (U.S. Patent No. 5804839). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5804839
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile