The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1993
Filed:
Sep. 09, 1991
Applicant:
Inventors:
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437100 ; 437233 ; 437239 ;
Abstract
A silicon thin-film is formed on a silicon carbide (SiC) semiconductor body through the use of the thermal decomposition of monosilane (SiH.sub.4) gas. The thus formed silicon thin-film is oxidized by a thermal oxidation method which employs an oxygen gas so as to form a silicon oxide film of about 600 to 1200 .ANG. on the silicon carbide (SiC) semiconductor. The silicon oxide film shows a sharp boundary between the silicon carbide (SiC) semiconductor. An aluminum electrode is formed on the silicon oxide film, thereby providing a MOS structure on the silicon carbide (SiC) semiconductor.