The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Apr. 26, 1996
Applicant:
Inventors:
Katsuki Furukawa, Sakai, JP;
Satoshi Sugahara, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566431 ; 1566621 ; 252 791 ; 216 67 ;
Abstract
A dry etching method for etching a gallium nitride type compound semiconductor is disclosed. The method uses a mixed gas including silicon tetrachloride (SiCl.sub.4) gas and chlorine (Cl.sub.2) gas as an etching gas in a reactive ion etching.