The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 1994
Filed:
Aug. 24, 1992
Mitsuhiro Shigeta, Kyoto, JP;
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Yoshihisa Fujii, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for the growth of silicon carbide single crystals is disclosed which includes the step of growing silicon carbide single crystals on a silicon single-crystal substrate. The silicon single-crystal substrate has growth areas with a crystal orientation inclined by an angle .theta. from the [100] direction toward at least one of the [011] and [011] directions and with a lateral dimension d taken along the direction of such inclination toward the [011] or [011] direction. The angle .theta. is set to be in the range of zero to tan.sup.-1 (.sqroot.2/8) degrees (with the proviso that the angle .theta. is not equal to tan.sup.-1 (.sqroot.2/2) degrees). The lateral dimension d is set to be in the range of 0.1 to 100 .mu.m. In this method, the silicon carbide single crystals are grown to a thickness t approximately equal to or greater than (.sqroot.2+tan.theta.)d/.vertline.1-.sqroot.2tan.theta..vertline., so that these silicon carbide single crystals are substantially free of defects such as stacking faults.