The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1993
Filed:
Sep. 16, 1991
Applicant:
Inventors:
Yoshihisa Fujii, Nara, JP;
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Mitsuhiro Shigeta, Kyoto, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257289 ; 257 77 ; 257383 ; 257384 ; 257472 ; 257613 ; 257769 ;
Abstract
A silicon carbide field-effect transistor is disclosed which includes an MOS structure composed successively of a silicon carbide layer, a gate insulator film, and a gate electrode. The field-effect transistor has source and drain regions formed in the silicon carbide layer, between which the MOS structure is disposed, wherein at least one of the source and drain regions is formed by the use of a Schottky contact on the silicon carbide layer.