The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1993
Filed:
Feb. 28, 1992
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H61B / ;
U.S. Cl.
CPC ...
156612 ; 148D / ; 148 331 ; 423346 ; 427249 ; 4272551 ; 437 93 ; 437100 ;
Abstract
There is provided a method for the production of a silicon carbide single crystal, which includes the steps of: providing a silicon single-crystal substrate having a growth plane with a crystal orientation inclined from the [100] direction toward an off-direction, wherein the crystal orientation is defined by a deviation angle .theta. of 5 to 40 degrees, as measured from the [011] direction toward the [011] direction, and a tilt angle .phi. of 1 to 7 degrees, as measured from the [100] direction toward the off-direction; and growing a silicon carbide single crystal on the substrate.