The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 1994
Filed:
Jun. 08, 1992
Applicant:
Inventors:
Akira Suzuki, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Mitsuhiro Shigeta, Joyo, JP;
Yoshihisa Fujii, Nagoya, JP;
Atsuko Ogura, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257 94 ; 257103 ; 257197 ; 257565 ; 437100 ;
Abstract
A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a .beta.-type silicon carbide layer having an .alpha.-type silicon carbide layer disposed thereon.