The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Mar. 26, 2002
Nobuhiko Sawaki, Nagoya-shi Aichi, JP;
Yoshio Honda, Nagoya, JP;
Norifumi Kameshiro, Nagoya, JP;
Masahito Yamaguchi, Nagoya, JP;
Norikatsu Koide, Tenri, JP;
Shigetoshi Ito, Ikoma, JP;
Tomoki Ono, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Nobuhiko Sawaki, Nagoya-shi Aichi, JP;
Yoshio Honda, Nagoya, JP;
Norifumi Kameshiro, Nagoya, JP;
Masahito Yamaguchi, Nagoya, JP;
Norikatsu Koide, Tenri, JP;
Shigetoshi Ito, Ikoma, JP;
Tomoki Ono, Nara, JP;
Katsuki Furukawa, Sakai, JP;
Other;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.