Kai-Hsuan Lee

This inventor holds 75 USPTO granted patents and 23 published patent applications, primarily in FinFET Technology (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2016-2026.

USPTO Granted Patents = 75 (Patent Applications = 23)

% Patents Active = 96.0

Average Co-Inventor Count = 5.1

ph-index = 6

Forward Citations = 148(Granted Patents)

Forward Citations (Not Self Cited) = 115(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

72 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

3 out of 437

Taiwan Semiconductor Manufacturing Co., Ltd.

patents

Years Active: 2016-2026

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Areas of Expertise:

FinFET

Air Gap Formation

Semiconductor Structure

Parasitic Capacitance

Epitaxy

Gate Structure

Silicide Layer

Transistor Contacts

Memory Arrays

Layer Expansion

Contact Plug

Isolation Structures

75 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12701786 - Fin field-effect transistor device and method (2026-08-04),

2. 12598796 - High aspect ratio gate structure formation (2026-04-07),

3. 12543560 - Semiconductor structure (2026-02-03),

4. 12532723 - Scalable patterning through layer expansion process and resulting structures (2026-01-20),

5. 12484292 - Methods of reducing parasitic capacitance in semicondutor devices (2025-11-25),

6. 12464774 - Semiconductor structure and method for manufacturing the same (2025-11-04),

7. 12439678 - Isolation structures (2025-10-07),

8. 12433008 - FinFET structure with airgap and method of forming the same (2025-09-30),

9. 12432963 - Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer (2025-09-30),

10. 12408315 - Flexible merge scheme for source/drain epitaxy regions (2025-09-02),

11. 12376357 - Fin field-effect transistor device and method (2025-07-29),

12. 12376351 - Self-aligned contact air gap formation (2025-07-29),

13. 12362187 - Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure (2025-07-15),

14. 12324202 - Semiconductor device structure and method for forming the same (2025-06-03),

15. 12237231 - FINFET device with wrapped-around epitaxial structure and manufacturing method thereof (2025-02-25),

Title: The Innovative Journey of Inventor Kai-Hsuan Lee

Introduction: Kai-Hsuan Lee is a pioneering inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Kai-Hsuan Lee holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence. His most recent patents focus on enhancing the efficiency of solar panels through innovative design and optimizing data processing algorithms for machine learning applications.

Career Highlights: With a background in electrical engineering, Kai-Hsuan Lee has had a distinguished career working for leading tech companies in Taiwan. He has been instrumental in developing cutting-edge technologies that have revolutionized the industry, earning him recognition as a visionary in his field.

Collaborations: Throughout his career, Kai-Hsuan Lee has collaborated with top researchers, engineers, and scientists from around the world. His collaborative efforts have led to the successful implementation of novel ideas and the creation of innovative solutions to complex technological challenges.

Conclusion: In conclusion, Kai-Hsuan Lee stands as a shining example of a visionary inventor whose relentless pursuit of innovation has significantly impacted the tech industry. His pioneering work continues to inspire future generations of inventors and engineers to push the boundaries of what is possible in the world of technology.