The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Dec. 01, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wen-Kai Lin, Yilan, TW;
Bo-Yu Lai, Taipei City, TW;
Li Chun Te, Renwu Township, TW;
Kai-Hsuan Lee, Hsinchu, TW;
Sai-Hooi Yeong, Zhubei City, TW;
Tien-I Bao, Taoyuan City, TW;
Wei-Ken Lin, Tainan City, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.