Location History:
- Kaohsiung, TW (2019)
- Renwu, TW (2019)
- Kaohsiung County, TW (2020)
- Renwu Township, TW (2020 - 2023)
Company Filing History:
Years Active: 2019-2025
Title: **Innovations of Li Chun Te: A Pioneer in Semiconductor Technology**
Introduction
Li Chun Te is a renowned inventor based in Renwu, Taiwan, recognized for his contributions to semiconductor technologies. With an impressive portfolio of 11 patents, Li has made significant advancements in the field, particularly focusing on the development of FinFET devices.
Latest Patents
Among his notable patents, one highlights the innovation of a low-k gate spacer and methods for forming the same. This invention pertains to a FinFET device that features gate spacers designed to minimize capacitance, thereby enhancing device performance. The technology involves the sequential deposition of materials to create gate spacers that effectively reduce parasitic capacitance between gate structures and source/drain contact areas. Another key patent involves the formation of low-k features within semiconductor devices, detailing methods that protect these low-k features during downstream processes. This innovation is critical for maintaining device integrity and performance in advanced semiconductor manufacturing.
Career Highlights
Li Chun Te has established himself at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to push the boundaries of semiconductor innovation. His work involves rigorous research and development, advancing cutting-edge solutions that cater to the ever-evolving demands of the semiconductor industry.
Collaborations
Throughout his career, Li has collaborated with talented colleagues such as Wei-Ken Lin and Tien-I Bao. These collaborations have fostered a dynamic work environment that encourages innovation and drives the development of new technologies in the semiconductor field.
Conclusion
In conclusion, Li Chun Te's contributions to semiconductor technology are commendable. His 11 patents, including innovations in low-k gate spacers and their application in FinFET devices, exemplify his commitment to advancing the industry. With continued collaboration and research, he remains a pivotal figure in the realm of semiconductor inventions.