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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11295948 B1

PDFFull Text
Date of Patent:
Apr. 05, 2022

Filed:

Mar. 15, 2021

Low-k feature formation processes and structures formed thereby

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wan-Yi Kao, Baoshan Township, TW;

Chung-Chi Ko, Nantou, TW;

Li Chun Te, Renwu Township, TW;

Hsiang-Wei Lin, New Taipei, TW;

Te-En Cheng, Taoyuan, TW;

Wei-Ken Lin, Tainan, TW;

Guan-Yao Tu, Hsinchu, TW;

Shu Ling Liao, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Roberts P Culbert

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); H01L 21/0214 (2013.01); H01L 21/02126 (2013.01); H01L 21/02205 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/31111 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01); H01L 29/6656 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 29/36 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

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