Bo-Yu Lai

This inventor holds 33 USPTO granted patents and 14 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bo-Yu Lai. Retrieved from https://idiyas.com/inventor/bo-yu-lai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 (Patent Applications = 14)

% Patents Active = 100.0

Average Co-Inventor Count = 5.8

ph-index = 5

Forward Citations = 77(Granted Patents)

Location History:

Hsin-Chu, TW (2017)
Taipei, TW (2016 - 2024)

Company Filing History:

33 out of 42,926

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2025

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Areas of Expertise:

Air Gap Formation

Leakage Current Suppression

FinFET Structure

Low-k Gate Spacer

Conformal Transfer Doping

Transistor Fabrication

Source/Drain Barrier Layer

Self-Aligned Contacts

Gate Spacer Growth

Epitaxy Structure

Tunable Channel Layer

Recessed Silicon Cap

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12376351 - Self-aligned contact air gap formation (2025-07-29),

2. 12363989 - Semiconductor device with leakage current suppression and method for forming the same (2025-07-15),

3. 12300540 - Conductive feature of semiconductor device and method of forming same (2025-05-13),

4. 12278145 - Semiconductor devices with a source/drain barrier layer and methods of manufacture (2025-04-14),

5. 12266655 - Transistors with recessed silicon cap and method forming same (2025-04-01),

6. 12249640 - Conformal transfer doping method for Fin-like field effect transistor (2025-03-11),

7. 12237230 - Semiconductor device with leakage current suppression and method for forming the same (2025-02-25),

8. 12218138 - Air gap formation between gate spacer and epitaxy structure (2025-02-04),

9. 12191370 - Semiconductor device with tunable channel layer usage and methods of fabrication thereof (2025-01-07),

10. 11901408 - Self-aligned contact air gap formation (2024-02-13),

11. 11862713 - Conformal transfer doping method for fin-like field effect transistor (2024-01-02),

12. 11855182 - Low-k gate spacer and methods for forming the same (2023-12-26),

13. 11855097 - Air gap formation between gate spacer and epitaxy structure (2023-12-26),

14. 11626504 - Fin field effect transistor (FinFET) device structure (2023-04-11),

15. 11476352 - Conformal transfer doping method for fin-like field effect transistor (2022-10-18),

Sure, I can help with that. Here is an article about inventor Bo-Yu Lai.

Title: Innovator Spotlight: Bo-Yu Lai - Revolutionizing Semiconductor Fabrication

Introduction:

Bo-Yu Lai, a visionary inventor based in Taipei, Taiwan, is making significant strides in the field of semiconductor technology with his innovative patents and groundbreaking research. With a portfolio of 24 patents to his name, Bo-Yu Lai is a driving force behind cutting-edge advancements in integrated circuit (IC) fabrication and fin-like field effect transistors (FinFETs).

Latest Patents:

Bo-Yu Lai's recent patents highlight his expertise in semiconductor fabrication techniques. One of his latest patents, "Self-aligned contact air gap formation," details a method for IC fabrication that involves creating an air gap structure to enhance the performance of semiconductor devices. Another patent, "Conformal transfer doping method for fin-like field effect transistor," focuses on advanced doping techniques for FinFETs, improving their efficiency and functionality.

Career Highlights:

Bo-Yu Lai is currently affiliated with Taiwan Semiconductor Manufacturing Company Limited (TSMC), a global leader in semiconductor manufacturing. His role at TSMC allows him to spearhead cutting-edge research and develop innovative solutions for the semiconductor industry. Through his work, Bo-Yu Lai continues to push the boundaries of semiconductor technology and drive industry innovations forward.

Collaborations:

In his professional journey, Bo-Yu Lai has collaborated with esteemed colleagues such as Sai-Hooi Yeong and Yen-Ming Chen. Together, they have synergized their expertise to tackle complex challenges in semiconductor fabrication and contribute to the development of next-generation technologies. Their collaborative efforts have led to significant advancements in the field, cementing their reputation as pioneers in semiconductor innovation.

Conclusion:

Bo-Yu Lai's relentless pursuit of innovation and his dedication to advancing semiconductor technology have positioned him as a key figure in the industry. With an impressive track record of patents and a strong commitment to research and development, Bo-Yu Lai continues to shape the future of semiconductor technology and inspire the next generation of inventors and researchers.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

14 patents pending: