The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2023
Filed:
Oct. 29, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Sai-Hooi Yeong, Zhubei, TW;
Chi-On Chui, Hsinchu, TW;
Bo-Feng Young, Taipei, TW;
Bo-Yu Lai, Taipei, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The FinFET device structure also includes an epitaxial source/drain (S/D) structure formed over the fin structure. A top surface and a sidewall of the fin structure are surrounded by the epitaxial S/D structure. A first distance between an outer surface of the epitaxial S/D structure and the sidewall of the fin structure is no less than a second distance between the outer surface of the epitaxial S/D structure and the top surface of the fin structure.