The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Aug. 10, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Bo-Yu Lai, Taipei, TW;
Jyun-Chih Lin, New Taipei, TW;
Yen-Ting Chen, Taichung, TW;
Wei-Yang Lee, Taipei, TW;
Chia-Pin Lin, Hsinchu County, TW;
Wei Hao Lu, Taoyuan, TW;
Li-Li Su, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a fin-shape base protruding from a substrate, channel structures suspended above the fin-shape base, a gate structure wrapping around each of the channel structures, a source/drain (S/D) epitaxial feature abutting the channel structures and directly above a top surface of the fin-shape base, inner spacers interposing the S/D epitaxial feature and the gate structure, and a dielectric layer disposed vertically between the top surface of the fin-shape base and a bottom surface of the S/D epitaxial feature.