The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Aug. 13, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Bo-Yu Lai, Taipei, TW;
Chin-Szu Lee, Taoyuan, TW;
Szu-Hua Wu, Zhubei, TW;
Shuen-Shin Liang, Hsinchu, TW;
Chia-Hung Chu, Taipei, TW;
Keng-Chu Lin, Ping-Tung, TW;
Sung-Li Wang, Zhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes forming a device region over a substrate; forming a first dielectric layer over the device region; forming an opening in the first dielectric layer; conformally depositing a first conductive material along sidewalls and bottom surfaces of the opening; depositing a second conductive material on the first conductive material to fill the opening, wherein the second conductive material is different from the first conductive material; and performing a first thermal process to form an interface region extending from a first region of the first conductive material to a second region of the second conductive material, wherein the interface region includes a homogeneous mixture of the first conductive material and the second conductive material.