The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Aug. 10, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Bo-Yu Lai, Taipei, TW;
Kai-Hsuan Lee, Hsinchu, TW;
Wei-Yang Lee, Taipei, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Yen-Ming Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a gate stack, an epitaxy structure, a first spacer, a second spacer, and a dielectric residue. The gate stack is over a substrate. The epitaxy structure is formed raised above the substrate. The first spacer is on a sidewall of the gate stack. The first spacer and the epitaxy structure define a void therebetween. The second spacer seals the void between the first spacer and the epitaxy structure. The dielectric residue is in the void and has an upper portion and a lower portion under the upper portion. The upper portion of the dielectric residue has a silicon-to-nitrogen atomic ratio higher than a silicon-to-nitrogen atomic ratio of the lower portion of the dielectric residue.