logo

For the Inventor, By the Inventor

Yilan, Taiwan

Wen-Kai Lin

This inventor holds 34 USPTO granted patents and 16 published patent applications, primarily in Semiconductor Technology. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Taiwan Semiconductor Manufacturing Co., Ltd., United Microelectronics Corp.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Kai Lin. Retrieved from https://idiyas.com/inventor/wen-kai-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 

% Patents Active = 100.0

Average Co-Inventor Count = 5.2

ph-index = 2

Forward Citations = 25(Granted Patents)


Location History:

  • Yilan County, TW (2018 - 2024)
  • Yilan, TW (2019 - 2024)
  • Hsinchu, TW (2023 - 2024)

Company Filing History:

goldMedal20 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal7 out of 491 
 
Taiwan Semiconductor Manufacturing Co., Ltd.
 patents
bronzeMedal7 out of 7,285 
 
United Microelectronics Corp.
 patents

Years Active: 2018-2026

Loading Chart...
Areas of Expertise:
Epitaxy Isolation
Nanostructure Transistor
Multi-Layer Gate Spacers
Low-K Dielectric Films
Field-Effect Transistor
Schottky Barrier Diode
Intra-Metal Capacitor
Annealing Treatment
34 patents (USPTO):Explore Patents
1. 12757467 - Low-K gate spacer and methods for forming the same (2026-10-06),
2. 12733244 - Method of manufacturing a semiconductor device with multi-layer gate spacers (2026-09-08),
3. 12733239 - Under epitaxy isolation structure (2026-09-08),
4. 12727227 - Method of forming a nano-FET semiconductor device having a spacer with a reducer seam (2026-09-01),
5. 12713637 - SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF FABRICATION THEREOF (2026-08-18),
6. 12701728 - Semiconductor structure including Schottky barrier diode and manufacturing method thereof (2026-08-04),
7. 12648191 - Transistor gate isolation structures and methods of forming the same (2026-06-02),
8. 12550402 - Nanostructure field-effect transistor device and method of forming (2026-02-10),
9. 12543343 - Semiconductor structure and method for forming the same (2026-02-03),
10. 12500115 - Semiconductor device and method for fabricating the same (2025-12-16),
11. 12426335 - Reducing k values of dielectric films through anneal (2025-09-23),
12. 12363979 - Nanosheet field-effect transistor device including multi-layer spacer film and method of forming (2025-07-15),
13. 12324208 - Method for manufacturing semiconductor device including annealing treatment of inner spacer layer (2025-06-03),
14. 12249639 - Semiconductor device including multiple inner spacers with different etch rates and method of making (2025-03-11),
15. 12206012 - Reducing K values of dielectric films through anneal (2025-01-21),

Title: The Innovative Journey of Wen-Kai Lin

Introduction: Wen-Kai Lin, a talented inventor hailing from Yilan County, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Lin's most recent patents include advancements in renewable energy technology, smart home devices, and medical equipment, showcasing his diverse range of expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Wen-Kai Lin has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of what is possible. His work has been recognized globally for its impact and ingenuity.

Collaborations: Throughout his career, Lin has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Wen-Kai Lin's passion for innovation, coupled with his dedication to creating a better future through technology, has solidified his reputation as a pioneering inventor in the industry. His continued pursuit of excellence is sure to lead to many more groundbreaking inventions in the years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…