Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Wen-Kai Lin

Chi On Chui

Yung-Cheng Lu

Che-Hao Chang

Sheng-Yuan Hsueh

Chih-Kai Kang

Yi-Chung Sheng

Sen-Hong Syue

Li-Chi Yu

Yoh-Rong Liu

Sai-Hooi Yeong

Tien-I Bao

Kai-Hsuan Lee

Bo-Yu Lai

Wei-Ken Lin

Li Chun Te

Hsin-Hsien Chen

Szu-Ying Chen

Shih-Hao Lin

Yen-Ting Chen

Kuo-Hsing Lee

Chien-Chih Lin

Ming-Lung Cheng

Chi-Horn Pai

Szu-Chi Yang

Shu-Hung Yu

Tsung-Hung Lee

Yee-Chia Yeo

Huicheng Chang

Wei-Yang Lee

Chia-Pin Lin

Yuan-Ching Peng

Chien-Liang Wu

Chen-Fong Tsai

Shih-Chiang Chen

Te-Wei Yeh

Cheng-I Chu

Po-Shao Lin

Yi-Rui Chen

A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second doped region between the first doped region and the first gate structure, forming a first contact plug on the first doped region, and then forming a second contact plug on the second doped region.

Semiconductor device and method for fabricating the same

A method includes performing an atomic layer deposition (ALD) process to form a dielectric layer on a wafer. The ALD process comprises an ALD cycle includes pulsing calypso ((SiCl)CH), purging the calypso, pulsing ammonia, and purging the ammonia. The method further includes performing a wet anneal process on the dielectric layer, and performing a dry anneal process on the dielectric layer.

Reducing k values of dielectric films through anneal

A method of forming a semiconductor device includes: forming a dummy gate structure over a nanostructure, where the nanostructure overlies a fin that protrudes above a substrate, where the nanostructure comprises alternating layers of a first semiconductor material and a second semiconductor material; forming openings in the nanostructure on opposing sides of the dummy gate structure, the openings exposing end portions of the first semiconductor material and end portions of the second semiconductor material; recessing the exposed end portions of the first semiconductor material to form first sidewall recesses; filling the first sidewall recesses with a multi-layer spacer film; removing at least one sublayer of the multi-layer spacer film to form second sidewall recesses; and forming source/drain regions in the openings after removing at least one sublayer, where the source/drain regions seal the second sidewall recesses to form sealed air gaps.

Nanosheet field-effect transistor device including multi-layer spacer film and method of forming

A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Method for manufacturing semiconductor device including annealing treatment of inner spacer layer

Improved inner spacers for semiconductor devices and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a substrate; a plurality of semiconductor channel structures over the substrate; a gate structure over the semiconductor channel structures, the gate structure extending between adjacent ones of the semiconductor channel structures; a source/drain region adjacent of the gate structure, the source/drain region contacting the semiconductor channel structures; and an inner spacer interposed between the source/drain region and the gate structure, the inner spacer including a first inner spacer layer contacting the gate structure and the source/drain region, the first inner spacer layer including silicon and nitrogen; and a second inner spacer layer contacting the first inner spacer layer and the source/drain region, the second inner spacer layer including silicon, oxygen, and nitrogen, the second inner spacer layer having a lower dielectric constant than the first inner spacer layer.

Semiconductor device including multiple inner spacers with different etch rates and method of making

Reducing K values of dielectric films through anneal

In an embodiment, a structure includes: a semiconductor substrate; a fin extending from the semiconductor substrate; a gate stack over the fin; an epitaxial source/drain region in the fin adjacent the gate stack; and a gate spacer disposed between the epitaxial source/drain region and the gate stack, the gate spacer including a plurality of silicon oxycarbonitride layers, each of the plurality of silicon oxycarbonitride layers having a different concentration of silicon, a different concentration of oxygen, a different concentration of carbon, and a different concentration of nitrogen.

Semiconductor device and method

A semiconductor device includes a plurality of nanostructures extending in a first direction above a semiconductor substrate and arranged in a second direction substantially perpendicular to the first direction and a gate structure extending in a third direction perpendicular to both the first and second directions, the gate structure surrounding each of the plurality of nano structures. Each of the plurality of nanostructures has an outer region having a composition different from a composition of an inner region of each of the plurality of the nanostructures. The gate structure includes a plurality of high-k gate dielectric layers respectively surrounding the plurality of nanostructures, a work function layer surrounding each of the plurality of high-k gate dielectric layers and a fill metal layer surrounding the work function layer.

Semiconductor device and forming method thereof

Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.

Method of forming a nano-FET semiconductor device

Nanosheet field-effect transistor device and method of forming

Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.

Low-k gate spacer and methods for forming the same

A semiconductor memory structure includes a substrate having thereon a transistor forming region and a capacitor forming region. A transistor is disposed on the substrate within the transistor forming region. A capacitor is disposed within the capacitor forming region and electrically coupled to the transistor. A first inter-layer dielectric layer covers the transistor forming region and the capacitor forming region. The first inter-layer dielectric layer surrounds a metal gate of the transistor and a bottom plate of the capacitor. A cap layer is disposed on the first inter-layer dielectric layer. The cap layer has a first thickness within the transistor forming region and a second thickness within the capacitor forming region. The first thickness is greater than the second thickness. The cap layer within the capacitor forming region acts as a capacitor dielectric layer of the capacitor.

Semiconductor memory structure and fabrication method thereof

Semiconductor devices and methods of manufacture are presented in which spacers are manufactured on sidewalls of gates for semiconductor devices. In embodiments the spacers comprise a first seal, a second seal, and a contact etch stop layer, in which the first seal comprises a first shell along with a first bulk material, the second seal comprises a second shell along with a second bulk material, and the contact etch stop layer comprises a third bulk material and a second dielectric material.

Semiconductor device having multi-layered gate spacers

Growing community of inventors

Yilan County, Taiwan

Wen-Kai Lin