The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Oct. 19, 2020
Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Kai-Hsuan Lee, Hsinchu, TW;
Jyh-Cherng Sheu, Hsinchu, TW;
Sung-Li Wang, Zhubei, TW;
Cheng-Yu Yang, Xihu Township, TW;
Sheng-Chen Wang, Hsinchu, TW;
Sai-Hooi Yeong, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H01L 23/485 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/76889 (2013.01); H10D 30/024 (2025.01); H10D 30/6219 (2025.01); H10D 62/116 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 23/485 (2013.01);
Abstract
In a method of manufacturing a semiconductor device, a first layer containing an amorphous first material is formed by a deposition process over a semiconductor layer. A second layer containing a metal second material is formed over the first layer. A thermal process is performed to form an alloy layer of the amorphous first material and the metal second material.