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For the Inventor, By the Inventor

Changhua, Taiwan

Cheng-Yu Yang

This inventor holds 29 USPTO granted patents and 2 published patent applications, primarily in FinFET Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Yu Yang. Retrieved from https://idiyas.com/inventor/cheng-yu-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 96.6

Average Co-Inventor Count = 6.3

ph-index = 4

Forward Citations = 65(Granted Patents)


Location History:

  • Xihu Township, Changhua County, TW (2016 - 2020)
  • Changhua County, TW (2018 - 2024)
  • Xihu Township, TW (2018 - 2024)

Company Filing History:

goldMedal29 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2016-2025

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Areas of Expertise:
FinFET
Epitaxial Structure
Air Gap Spacer
Contact Resistance
Source/Drain Epitaxy
Silicide Layer
Transistor Formation
Flexible Merge Scheme
Semiconductor Device
Doped Dielectric Layer
Manufacturing Method
29 patents (USPTO):Explore Patents
1. 12432963 - Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer (2025-09-30),
2. 12426346 - Semiconductor device and method (2025-09-23),
3. 12408315 - Flexible merge scheme for source/drain epitaxy regions (2025-09-02),
4. 12362187 - Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure (2025-07-15),
5. 12237231 - FINFET device with wrapped-around epitaxial structure and manufacturing method thereof (2025-02-25),
6. 12051628 - Semiconductor device with funnel shape spacer and methods of forming the same (2024-07-30),
7. 11901455 - Method of manufacturing a FinFET by implanting a dielectric with a dopant (2024-02-13),
8. 11856743 - Flexible merge scheme for source/drain epitaxy regions (2023-12-26),
9. 11488874 - Semiconductor device with funnel shape spacer and methods of forming the same (2022-11-01),
10. 11456383 - Semiconductor device having a contact plug with an air gap spacer (2022-09-27),
11. 11217486 - Semiconductor device and method (2022-01-04),
12. 11152486 - FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance (2021-10-19),
13. 11133229 - Forming transistor by selectively growing gate spacer (2021-09-28),
14. 11062957 - FinFET device with wrapped-around epitaxial structure and manufacturing method thereof (2021-07-13),
15. 10985167 - Flexible merge scheme for source/drain epitaxy regions (2021-04-20),

Title: **Innovative Contributions of Cheng-Yu Yang in Semiconductor Technology**

Introduction

Cheng-Yu Yang, based in Changhua County, Taiwan, is a distinguished inventor in the field of semiconductor technology, holding an impressive portfolio of 25 patents. His work has significantly contributed to advancements in semiconductor devices, showcasing his expertise and innovative approach within the industry.

Latest Patents

Among Cheng-Yu Yang's latest patents are groundbreaking inventions that enhance semiconductor device functionality. One notable patent is for a **FINFET device with a wrapped-around epitaxial structure and manufacturing method thereof**. This semiconductor device features a substrate, with two fins protruding from it, each fin having source/drain regions and a channel region. The design includes a gate stack engaging each fin's channel region along with ingenious epitaxial layers, allowing for advanced performance in semiconductor applications.

Another significant patent is for a **semiconductor device with a funnel shape spacer and methods of forming the same**. In this innovation, a substrate supports gate structures, each encompassing a gate electrode and a uniquely designed funnel-shaped spacer. This design improves the efficiency of source/drain contacts between the gate structures, delivering a novel approach to semiconductor fabrication.

Career Highlights

Cheng-Yu Yang has made pivotal contributions while working at renowned companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Taiwan Semiconductor Manufacturing Company Co., Ltd. His experience at these companies has been instrumental in shaping his innovative techniques and device designs.

Collaborations

Throughout his career, Cheng-Yu Yang has collaborated with notable colleagues such as Kai-Hsuan Lee and Sai-Hooi Yeong. These partnerships have enabled collaborative innovation, leading to advancements that push the boundaries of semiconductor technology.

Conclusion

Cheng-Yu Yang exemplifies the spirit of innovation in the semiconductor field, with his array of patents and collaboration with industry leaders. His continued efforts and research will undoubtedly drive future advancements in semiconductor technology, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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