The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
May. 21, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Su-Hao Liu, Jhongpu Township, TW;
Kuo-Ju Chen, Taichung, TW;
Kai-Hsuan Lee, Hsinchu, TW;
I-Hsieh Wong, Hsinchu, TW;
Cheng-Yu Yang, Xihu Township, TW;
Liang-Yin Chen, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
Syun-Ming Jang, Hsinchu, TW;
Meng-Han Chou, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.